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Proceedings Paper

Real-time control of photoresist thickness uniformity during the bake process
Author(s): Lay Lay Lee-Aquila; Charles D. Schaper; Weng Khuen Ho
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Paper Abstract

As the line-width goes sub-100 nm, process windows for al lithographic processes become smaller. Process control and monitoring of the process parameters become increasingly important and necessary as small variation in process variables such as exposure dose, temperature, resist thickness, developer concentration, etc. may cause the final critical dimension to differ from the specification.

Paper Details

Date Published: 23 August 2000
PDF: 11 pages
Proc. SPIE 4182, Process Control and Diagnostics, (23 August 2000); doi: 10.1117/12.410103
Show Author Affiliations
Lay Lay Lee-Aquila, National Univ. of Singapore (United States)
Charles D. Schaper, Stanford Univ. (United States)
Weng Khuen Ho, National Univ. of Singapore (Singapore)

Published in SPIE Proceedings Vol. 4182:
Process Control and Diagnostics
Michael L. Miller; Kaihan A. Ashtiani, Editor(s)

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