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Proceedings Paper

High-density plasma FSG charging damage
Author(s): Ting Cheong Ang; Man Siu Tse; Sang Yee Loong; Y. C. Wong; Wye Boon Loh
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Paper Abstract

In this work, plasma induced damage resulting from high density plasma undoped silicate glass and fluorinated silicate glass (FSG) deposition processes was studied. The extent of the plasma damage due to the two HDP processes were characterized based on 0.18 micrometers transistor test structures with different antenna ratios. Our results show that the plasma-induced damage from HDP FSG is greater than that from HDP USG. We have developed a novel integration scheme that is effective in reducing the damage from HDP FSG down to levels comparable to that of USG.

Paper Details

Date Published: 23 August 2000
PDF: 8 pages
Proc. SPIE 4182, Process Control and Diagnostics, (23 August 2000); doi: 10.1117/12.410073
Show Author Affiliations
Ting Cheong Ang, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Man Siu Tse, Nanyang Technological Univ. (Singapore)
Sang Yee Loong, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Y. C. Wong, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Wye Boon Loh, Chartered Semiconductor Manufacturing, Ltd. (Singapore)

Published in SPIE Proceedings Vol. 4182:
Process Control and Diagnostics
Michael L. Miller; Kaihan A. Ashtiani, Editor(s)

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