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Proceedings Paper

320 x 240 microbolometer uncooled IRFPA development
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Paper Abstract

LETI LIR has been involved in amorphous silicon uncooled microbolometer development for a few years. This silicon IR detection is now well mastered and matured so that industrial transfer LETI/LIR technology is performed towards Sofradir. Industrial production of 320x240 microbolometer array with 45 micrometers pitch is now started. After a short description of the technology and the readout circuit architecture we focus on device reliability which is the key point for microbolometer application. Methodology for reliability enhancement is described. First results obtained on amorphous silicon reliability are presented. Electro-optical results obtained from an IRCMOS 320x240 with 45 micrometers pitch are presented. NEDT close to 70 mK can be obtained with our standard microbolometer amorphous silicon technology.

Paper Details

Date Published: 15 December 2000
PDF: 7 pages
Proc. SPIE 4130, Infrared Technology and Applications XXVI, (15 December 2000); doi: 10.1117/12.409888
Show Author Affiliations
Jean-Luc Tissot, CEA-LETI (France)
Jean-Luc Martin, CEA-LETI (France)
Eric Mottin, CEA-LETI (France)
Michel Vilain, CEA-LETI (France)
Jean-Jacques Yon, CEA-LETI (France)
Jean-Pierre Chatard, SOFRADIR (France)

Published in SPIE Proceedings Vol. 4130:
Infrared Technology and Applications XXVI
Bjorn F. Andresen; Gabor F. Fulop; Marija Strojnik, Editor(s)

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