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Proceedings Paper

Performance of 320 x 240 uncooled IRFPA with SOI diode detectors
Author(s): Tomohiro Ishikawa; Masashi Ueno; Yoshiyuki Nakaki; Kazuyo Endo; Yasuaki Ohta; Junji Nakanishi; Yasuhiro Kosasayama; Hirofumi Yagi; Takanori Sone; Masafumi Kimata
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Paper Abstract

We reported a 320 x 240 uncooled IRFPA with 40 micrometers pitch having diode detectors fabricated on an SOI wafer. Since the fabrication process of the SOI diode detector is compatible with the silicon IC process, only a silicon IC fab is necessary for manufacture of the FPAs. This enables mass production of low cost uncooled FPAs. This paper focuses on the performance of the FPA. In the previous paper, we proposed a novel infrared absorbing structure which offers a very high fill factor. Although this structure exhibited a high infrared absorption because of interference absorbing components incorporated in the structure, large thermal capacitance was an issue. Thus we have improved the infrared absorbing structure in the newly developed FPA. The improved absorbing structure has been devised making use of reflection of metal interconnections including diode metal straps. A thermal time constant of 17 msec has been achieved without degrading the responsivity compared with the conventional absorbing structure.

Paper Details

Date Published: 15 December 2000
PDF: 8 pages
Proc. SPIE 4130, Infrared Technology and Applications XXVI, (15 December 2000); doi: 10.1117/12.409857
Show Author Affiliations
Tomohiro Ishikawa, Mitsubishi Electric Corp. (Japan)
Masashi Ueno, Mitsubishi Electric Corp. (Japan)
Yoshiyuki Nakaki, Mitsubishi Electric Corp. (Japan)
Kazuyo Endo, Mitsubishi Electric Corp. (Japan)
Yasuaki Ohta, Mitsubishi Electric Corp. (Japan)
Junji Nakanishi, Mitsubishi Electric Corp. (Japan)
Yasuhiro Kosasayama, Mitsubishi Electric Corp. (Japan)
Hirofumi Yagi, Mitsubishi Electric Corp. (Japan)
Takanori Sone, Mitsubishi Electric Corp. (Japan)
Masafumi Kimata, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 4130:
Infrared Technology and Applications XXVI
Bjorn F. Andresen; Gabor F. Fulop; Marija Strojnik, Editor(s)

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