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Proceedings Paper

Application of Schottky barrier bolometer arrays to cooled sensors
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Paper Abstract

We describe a model for cooled thermal imaging sensors, based on silicon Schottky diode bolometer arrays. The sensing mechanism is the modulation of Schottky diode dark current with temperature. The proposed array is identical to Schottky diode arrays, which would be used for uncooled thermal imaging, except for a change of the sensing electrode metal. We separate the thermal and electrical response of the detector elements and discuss sensor limitations related to detector thermal isolation. At a 180 K operating temperature, we project NEDT's in the 3 to 20 mK range, depending upon system f/number. A 20 cm aperture sensor based on this technology should have a noise equivalent power below 10-11 watts.

Paper Details

Date Published: 15 December 2000
PDF: 8 pages
Proc. SPIE 4130, Infrared Technology and Applications XXVI, (15 December 2000); doi: 10.1117/12.409850
Show Author Affiliations
Freeman D. Shepherd, Solid State Scientific Corp. (United States)
James E. Murguia, Solid State Scientific Corp. (United States)

Published in SPIE Proceedings Vol. 4130:
Infrared Technology and Applications XXVI
Bjorn F. Andresen; Gabor F. Fulop; Marija Strojnik, Editor(s)

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