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Proceedings Paper

New uncooled thermal IR detector using silicon-diode-micromachined isolated silicon diode for IR detection (MISIR)
Author(s): Jae-Kwan Kim; Chul-Hi Han
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Paper Abstract

A new thermal infrared detector using temperature characteristics of a diode has been developed. This micromachined isolated silicon diode for IR detection (MISIR) utilizes an electrochemical etching technique to achieve the thermal isolation of the diode. Experimental dependence of the diode current on the junction temperature enables a high responsivity of the MISIR and the electrochemical etch stop provides an effective isolation at simple and low-cost. The fabricated MISIR has demonstrated a detectivity of 1.2x1010(cm(DOT)HzHLF/W) at room temperature in air ambient.

Paper Details

Date Published: 15 December 2000
PDF: 10 pages
Proc. SPIE 4130, Infrared Technology and Applications XXVI, (15 December 2000); doi: 10.1117/12.409846
Show Author Affiliations
Jae-Kwan Kim, Korea Advanced Institute of Science and Technology and Samsung Electronics Co. Ltd. (South Korea)
Chul-Hi Han, Korea Advanced Institute of Science and Technology (South Korea)

Published in SPIE Proceedings Vol. 4130:
Infrared Technology and Applications XXVI
Bjorn F. Andresen; Gabor F. Fulop; Marija Strojnik, Editor(s)

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