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Proceedings Paper

Erbium-induced reconstructions on silicon (100) substrate
Author(s): G. R. Chen; D. W. Gong; Jianhua Liu; Yu Fu; Zhong Huang; Ling Ye
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Paper Abstract

Ultra-thin erbium layers are formed on Si(100) substrate by depositing 0.5 approximately 3 ML Er atoms in an ultra-high vacuum system. The films deposited at room temperature are in the amorphous form. After annealing at low temperatures, ordered structures form on the surface. The surface reconstruction is studied by in situ reflection high energy electron diffraction (RHEED). The transition of the RHEED patterns from (2X1) to (4X2) is observed with the increase of Er coverage up to 1 monolayers after low temperature annealing. Several cluster models are adopted for simulating Er adatoms located at different sites on Si(100) substrate to determine the favorable surface geometry. The first principle discrete variational cluster method based on ab initio local density approximation is used to calculate the total energies of different surface configurations.

Paper Details

Date Published: 29 November 2000
PDF: 5 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408438
Show Author Affiliations
G. R. Chen, Fudan Univ. (China)
D. W. Gong, Fudan Univ. (China)
Jianhua Liu, Fudan Univ. (China)
Yu Fu, Fudan Univ. (China)
Zhong Huang, Fudan Univ. (China)
Ling Ye, Fudan Univ. (China)

Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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