Share Email Print

Proceedings Paper

Properties of the film electroluminescence of ZnS:TbF3
Author(s): Dawei He; Qingguo Yuan; Guanghui Yu; Yongsheng Wang; Xurong Xu
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The electroluminescence is reported from ZnS doped with terbium (Tb) thin films prepared by radio frequency magnetron sputtering method. We have systematically investigated the characteristics of the ZnS:TbF3 thin film electroluminescence devices, such as film characteristics of the ZnS/Tb active layer, substrate temperatures during magnetron sputtering and Tb concentration of the active layer, etc. From the results obtained, the mechanism of electroluminescence of thin film EL devices is discussed, and then the relationships between the EL characteristics and the device parameters are considered.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408414
Show Author Affiliations
Dawei He, Northern Jiaotong Univ. (China)
Qingguo Yuan, Northern Jiaotong Univ. (China)
Guanghui Yu, Northern Jiaotong Univ. (China)
Yongsheng Wang, Northern Jiaotong Univ. (China)
Xurong Xu, Northern Jiaotong Univ. (China)

Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?