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Proceedings Paper

Photoinduced phenomena in polysilane films
Author(s): Yoshikazu Nakayama; Hiroyuki Inagi; Tatsuo Fujii; Lujun Pan
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Paper Abstract

The photoinduced phenomena involving the photoscission of (sigma) bonds and photocreation of electronic defects have been studied systematically in films of (MeSiPh)n, (n- Hex2Si)n, (c-HeSiMe)n and (n-pentyl2Si)n as different polysilanes with and without phenyl substituents. The results have revealed the followings. A photoscission model established for (MeSiPh)n, where the photoscission cross-section is larger for longer segments and the reaction is thermally activated with the activation energies being distributed in a shape given by a combination with two exponential functions, is consistent with the processes in other polysilanes. The photoscission of (sigma) bonds creates defects to decrease the photoluminescence for polysilanes with phenyl substituents and some centers to enhance the photoluminescence for (c-HexSiMe)n and (n- pentyl2Si)n. The photoscission of (sigma) bonds occurs preferably at edges of the segments in (c-Hex2Si)n and at the inside of the segments for other three polysilanes. The orientation of (MeSiPh)n is effective to decrease the photoscission cross-section.

Paper Details

Date Published: 29 November 2000
PDF: 6 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408362
Show Author Affiliations
Yoshikazu Nakayama, Osaka Prefecture Univ. (Japan)
Hiroyuki Inagi, Osaka Prefecture Univ. (Japan)
Tatsuo Fujii, Osaka Prefecture Univ. (Japan)
Lujun Pan, Osaka Prefecture Univ. (Japan)

Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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