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Proceedings Paper

Low-temperature preparation of SrBi2Ta2O9 ferroelectric thin film by pulsed laser deposition and its application to metal-ferroelectric-insulator-semiconductor structure with nitride buffer layers
Author(s): Masanori Okuyama; Hideki Sugiyama; Toshiyuki Nakaiso; Minoru Noda
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Paper Abstract

SrBi2Ta2O9 (SBT) ferroelectric thin films have been deposited at temperatures as low as 500 degree(s)C by Pulsed Laser Deposition method on silicon nitride (SiNx) and silicon oxynitride (SiON), being insulating barrier against inter-diffusion. Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structures has been fabricated using SiNx/SiO2/Si and SiON/Si and shows good C-V hystereses. It is confirmed by RBS analysis and C-V characteristics that the SiNx layer shows good barrier effect compared with SiO2 layer. It is also clarified from the direction and voltage-scanning speed of in the C-V curve that their MFIS structures show hysteresis induced by ferroelectric polarization. An Al/SBT/SiO2/Si structure shows a large memory window in C-V curve and a smaller shift than those in the Al/SBT/SiO2/Si structure. An Al/SBT/SiON/Si structure also shows good C-V characteristics whose gradient corresponding to the SiO2/Si interface trap is very small. Moreover, retention characteristics of the memorized states of the capacitance have been measured and analyzed, taking into account leakage current through ferroelectric and insulator films.

Paper Details

Date Published: 29 November 2000
PDF: 6 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408333
Show Author Affiliations
Masanori Okuyama, Osaka Univ. (Japan)
Hideki Sugiyama, Osaka Univ. (Japan)
Toshiyuki Nakaiso, Osaka Univ. (Japan)
Minoru Noda, Osaka Univ. (Japan)

Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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