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Proceedings Paper

Conditions of liquid phase epitaxy of CdxHg1-xTe solid solutions for focal plane IR arrays
Author(s): Igor A. Denisov; Vladimir M. Lakeenkov; O. S. Mazhorova; Natalja A. Smirnova
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Paper Abstract

The epitaxy of CdxHg1-xTe (X=0.21-0.29) on Cd0.96An0.04Te (111)B substrates has been performed from Te-base melts at 515-495 degree(s)C. The surface morphology and the homogeneity of the composition ((open square)x) and the thickness ((open square)d) of the epitaxial layers over their area have been studied as a function of growth conditions. The hydrodynamic processes that occur in the liquid phase during the epitaxy have been analyzed using numeric methods based on solving a set of two-dimensional transient-state equations of convective diffusion in the Bussinesk approximation. The calculation results are in a good agreement with the experimental data. The wave relief on the epitaxial layer surfaces has been found to originate mainly from the convective mass transport conditions in the liquid phase at an early stage of the epitaxy when the crystallization front forms. Epitaxial layers with diameters of up to 30 mm, (open square)d approximately 1 mm and (open square)x approximately 0.003 have been grown. After heat treatment in Hg vapors at 340-360 degree(s)C the layers have the p type of conductivity with the hole concentration p=(0.5-2.0)x1016cm-3 and the hole mobility (open square) greater than or equal to 500cm2/V(center dot)s

Paper Details

Date Published: 28 November 2000
PDF: 9 pages
Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); doi: 10.1117/12.407735
Show Author Affiliations
Igor A. Denisov, State Institute of Rare Metals (Russia)
Vladimir M. Lakeenkov, State Institute of Rare Metals (Russia)
O. S. Mazhorova, State Institute of Rare Metals (Russia)
Natalja A. Smirnova, State Institute of Rare Metals (Russia)

Published in SPIE Proceedings Vol. 4340:
16th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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