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Proceedings Paper

Multichannel infrared imager
Author(s): A. A. Aliyev; A. K. Mamedov; I. A. Nasibov; Sh. O. Eminov; E. K. Huseynov; V. M. Salmanov
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Paper Abstract

The principle of construction of the multi-channel IR-CCD on the basis of vary-gap semiconductor have been considered. On an example of HgTe-CdTe solid solutions is shown, that grown epitaxial layers repeats of substrate form at using semiconductor substrate of special construction. By the subsequent treatment of the surface of obtained structure, it can be reached that the forbidden band energy in the plane of structure for each channel of device was constant (Eg=const), but is different for these channels due to gradient of Eg on thickness of epitaxial layer, which the range of spectral sensitivity of CCD channels are defined. Some peculiarities of technology for manufacturing such structures have been represented, also.

Paper Details

Date Published: 28 November 2000
PDF: 5 pages
Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000);
Show Author Affiliations
A. A. Aliyev, Institute of Photoelectronics (Azerbaijan)
A. K. Mamedov, Institute of Photoelectronics (Azerbaijan)
I. A. Nasibov, Institute of Photoelectronics (Azerbaijan)
Sh. O. Eminov, Institute of Photoelectronics (Azerbaijan)
E. K. Huseynov, Institute of Photoelectronics (Azerbaijan)
V. M. Salmanov, Baku State Univ. (Azerbaijan)

Published in SPIE Proceedings Vol. 4340:
16th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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