We have developed a model of the statistical variations in the electrical charge transport in CdxZn1-xTe(CZT) detectors. The model includes a simulation of the charge carrier generation for each photon interaction, using a calculated absorption coefficient of the photoelectric absorption. Next, we simulate the induced signal as carriers drift towards the collecting electrode under trapping conditions with negligible detrapping. Finally, a pulse height histogram is composed simulating the spectral response of the detector and incorporating the electronic noise component. A comparison between experimental and calculated CZT spectra was performed. These results and the potential for using the model in detector design will be discussed and presented.

Date Published: 21 November 2000
PDF: 5 pages
Proc. SPIE 4141, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics II, (21 November 2000); doi: 10.1117/12.407598

Published in SPIE Proceedings Vol. 4141:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics II
Ralph B. James; Richard C. Schirato, Editor(s)