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Proceedings Paper

Low-temperature processing for the fabrication of heavily doped CdTe gamma-ray detectors by epitaxial growth and laser annealing
Author(s): Yoshinori Hatanaka; Madan Niraula; A. Nakamura; Toru Aoki; Dajii Noda; Yasuhiro Tomita
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Paper Abstract

The fabrication methods and performances of CdTe radiation detectors in a p-i-n structure which helps to reduce the leakage current are reported. Two different types of doping methods were studied in order to attain heavily doped CdTe layers. One is the hydrogen plasma- radical-assisted metalorganic chemical vapor deposition (HPRA-MOCVD) and the other is the excimer laser processing, both of which are carried out at a low temperature. Using the HPRA-MOCVD, iodine doped n-type CdTe layers with carrier concentration around 1018 cm-3 and electron mobility of 100 cm2/V-s were grown epitaxially on the GaAs substrates at a low temperature of 150 degrees Celsius. As the other method, excimer laser was irradiated on the high resistivity CdTe crystals (resistivity: 109 (Omega) cm) by depositing a thin layer of dopant materials like Sb, Na2Te, or In on the crystals surfaces. For the Sb and Na2Te dopant, heavily doped p+-type thin layer was formed on the CdTe crystal, whereas In dopant exhibited n+-type layer. Carrier concentrations in those laser doped layers were in the order of 1019 cm-3. These low temperature processes can be adapted for the fabrication of CdTe and CdZnTe detectors.

Paper Details

Date Published: 21 November 2000
PDF: 9 pages
Proc. SPIE 4141, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics II, (21 November 2000); doi: 10.1117/12.407585
Show Author Affiliations
Yoshinori Hatanaka, Shizuoka Univ. (Japan)
Madan Niraula, Shizuoka Univ. (Japan)
A. Nakamura, Shizuoka Univ. (Japan)
Toru Aoki, Shizuoka Univ. (Japan)
Dajii Noda, Shizuoka Univ. (Japan)
Yasuhiro Tomita, Hamamatsu Photonics K.K. (Japan)

Published in SPIE Proceedings Vol. 4141:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics II
Ralph B. James; Richard C. Schirato, Editor(s)

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