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Proceedings Paper

Multiple-channel InGaAs/InGaAsP electro-absorption intensity modulator fabricated using low-energy-phosphorus-ion-implantation-induced intermixing
Author(s): Seng Lee Ng; Hwi Siong Lim; Boon Siew Ooi; Yee Loy Lam; Yan Zhou; Yuen Chuen Chan; Vincent Aimez; Jacques Beauvais; Jean Beerens
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Paper Abstract

A new quantum-well intermixing process in InGaAs-InGaAsP structures, based on controlled low energy phosphorus (P) ion implantation, has been employed in the fabrication of multiple wavelength selective channel electroabsorption (EA) intensity modulators. These modulators, fabricated on a single chip, have an intensity modulation depth as high as -1 1 dB for voltage swings as low as -6 V.

Paper Details

Date Published: 15 December 2000
PDF: 5 pages
Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); doi: 10.1117/12.406442
Show Author Affiliations
Seng Lee Ng, Nanyang Technological Univ. (Singapore)
Hwi Siong Lim, Nanyang Technological Univ. (Singapore)
Boon Siew Ooi, Nanyang Technological Univ. (Singapore)
Yee Loy Lam, Nanyang Technological Univ. (Singapore)
Yan Zhou, Nanyang Technological Univ. (Singapore)
Yuen Chuen Chan, Nanyang Technological Univ. (Singapore)
Vincent Aimez, Univ. de Sherbrooke (Canada)
Jacques Beauvais, Univ. de Sherbrooke (Canada)
Jean Beerens, Univ. de Sherbrooke (Canada)

Published in SPIE Proceedings Vol. 4087:
Applications of Photonic Technology 4
Roger A. Lessard; George A. Lampropoulos, Editor(s)

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