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Proceedings Paper

In-situ film thickness measurement for CVD by use of spectrometer
Author(s): Tomomi Ino; Akira Soga; Yoshiaki Akama; Naoto Nishida
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Paper Abstract

A new in situ measurement system of film thickness for thermal CVD based on thin film interference is presented. Comparing the radiation spectrum during deposition with that before deposition, we controlled the thickness of' the films with accuracy of 3nm on the thermal process where the temperature changes significantly. Using the interfi.rence of the substrate, we measured thickness of the film thinner than 2Onm.

Paper Details

Date Published: 15 December 2000
PDF: 7 pages
Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); doi: 10.1117/12.406375
Show Author Affiliations
Tomomi Ino, Toshiba Corp. (Japan)
Akira Soga, Toshiba Corp. (Japan)
Yoshiaki Akama, Toshiba Corp. (Japan)
Naoto Nishida, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 4087:
Applications of Photonic Technology 4
Roger A. Lessard; George A. Lampropoulos, Editor(s)

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