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Proceedings Paper

Modification of the optical and electronics parameters in a-Si:H as a result of annealing with CO2 laser radiation
Author(s): A. Grabowski; Marian Nowak
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Paper Abstract

Thin film of hydrogenated amorphous silicon (a-Si:H) were annealed using CO2 laser radiation ((lambda) equals10,6 micrometers ). The influence of this laser treatment on spectral dependencies of real part of refractive index and absorption coefficient of light in a-Si:H are presented. The values of energy gap have decreased while the Urbach energy increased after CO2 laser annealing of a-Si:H. The conductivity and photoconductivity of the annealed material have decreased. The power coefficient of the light intensity dependence of photoconductivity has also changed. The influence of CO2 laser irradiation on the energetic distribution of electron states of a a-Si:H is reported.

Paper Details

Date Published: 2 November 2000
PDF: 6 pages
Proc. SPIE 4238, Laser Technology VI: Applications, (2 November 2000); doi: 10.1117/12.405973
Show Author Affiliations
A. Grabowski, Silesian Technical Univ. (Poland)
Marian Nowak, Silesian Technical Univ. (Poland)

Published in SPIE Proceedings Vol. 4238:
Laser Technology VI: Applications
Wieslaw L. Wolinski; Zdzislaw Jankiewicz, Editor(s)

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