
Proceedings Paper
X-ray study of the roughness of surfaces and interfacesFormat | Member Price | Non-Member Price |
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Paper Abstract
The potentialities of the x-ray scattering methods (XRS) for quantitative testing of supersmooth surfaces, thin films, and multilayer structures are discussed. The results of the surface roughness study with the use of XRS technique in hard and sort x-ray spectral regions are compared with independent measurements of the roughness by atomic force microscopy (AFM). It is demonstrated that the results obtained by XRS and AFM are in a very good agreement in spite of different physical principles and underlying the methods. XRS technique is applied for the roughness study of thin films which are used in applications for x-ray and UV optics. The XRS method is demonstrated to enable quantitative evaluation of PSD functions of both the film interfaces and the correlation between the substrate and film roughnesses. X-ray investigations of the correlation of the roughnesses of short-period multilayer structures are discussed as well. The use of the whispering gallery effect is demonstrated to extend the XRS method to control of the concave surface roughness.
Paper Details
Date Published: 2 November 2000
PDF: 12 pages
Proc. SPIE 4099, Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries, (2 November 2000); doi: 10.1117/12.405809
Published in SPIE Proceedings Vol. 4099:
Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries
Ghanim A. Al-Jumaily; Angela Duparre; Bhanwar Singh, Editor(s)
PDF: 12 pages
Proc. SPIE 4099, Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries, (2 November 2000); doi: 10.1117/12.405809
Show Author Affiliations
Igor V. Kozhevnikov, P.N. Lebedev Physical Institute (Russia)
Victor E. Asadchikov, Institute of Crystallography (Russia)
Inna N. Bukreeva, P.N. Lebedev Physical Institute (Russia)
Angela Duparre, Fraunhofer Institute for Applied Optics and Precision Engineering (Germany)
Yury S. Krivonosov, Institute of Crystallography (Russia)
Victor E. Asadchikov, Institute of Crystallography (Russia)
Inna N. Bukreeva, P.N. Lebedev Physical Institute (Russia)
Angela Duparre, Fraunhofer Institute for Applied Optics and Precision Engineering (Germany)
Yury S. Krivonosov, Institute of Crystallography (Russia)
Christian Morawe, European Synchrotron Radiation Facility (France)
Vladimir I. Ostashev, Russian Federal Nuclear Ctr. (Russia)
Mikhail V. Pyatakhin, P.N. Lebedev Physical Institute (Russia)
Eric Ziegler, European Synchrotron Radiation Facility (France)
Vladimir I. Ostashev, Russian Federal Nuclear Ctr. (Russia)
Mikhail V. Pyatakhin, P.N. Lebedev Physical Institute (Russia)
Eric Ziegler, European Synchrotron Radiation Facility (France)
Published in SPIE Proceedings Vol. 4099:
Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries
Ghanim A. Al-Jumaily; Angela Duparre; Bhanwar Singh, Editor(s)
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