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Proceedings Paper

Correlation between distributed and lumped FET model parameters
Author(s): Subrata Halder; Geok Ing Ng; Choi Look Law
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Paper Abstract

For long gate-width FET devices, distributed model provides better accuracy. However the extraction of model parameters are difficult as they are expressed in unit gate width which may be different from the device under investigation. In this paper a technique is proposed for defining these model parameters by linking them with lumped element equivalent circuits through simple relations. A good correlation between the lumped and the distributed models are observed for a 2 by 300 micrometers pHEMT device. The method provides initial values of the distributed model, which may further be optimized for perfect fit over wider frequency range.

Paper Details

Date Published: 24 October 2000
PDF: 5 pages
Proc. SPIE 4228, Design, Modeling, and Simulation in Microelectronics, (24 October 2000); doi: 10.1117/12.405406
Show Author Affiliations
Subrata Halder, Nanyang Technological Univ. (Singapore)
Geok Ing Ng, Nanyang Technological Univ. (Singapore)
Choi Look Law, Nanyang Technological Univ. (Singapore)

Published in SPIE Proceedings Vol. 4228:
Design, Modeling, and Simulation in Microelectronics
Bernard Courtois; Serge N. Demidenko; Lee Y. Lau, Editor(s)

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