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Proceedings Paper

Pseudomorphic InxGa1-xAs/InyAl1-yAs high-electron mobility transistor structures grown by solid source molecular beam epitaxy
Author(s): Hai Qun Zheng; Kaladhar Radhakrishnan; Soon Fatt Yoon; Geok Ing Ng
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Paper Abstract

We report on the optimization of InP-based InxGa1-xAs/InyAl1-yAs pseudomorphic high electron mobility transistor (PHEMT) structures to achieve the highest possible 2D electron gas density and mobility. Using our optimized growth conditions, high 2DEG concentration and mobility products have been obtained. The single-side-doped PHEMT structure with a (delta) -doping concentration of 6 by 1012 cm-2 gives a 2DEG sheet density of 3.93 by 1012 cm-2 and a top (delta) -doping concentration of 5 by 1012 cm-2 gives a 2DEG sheet density of 4.57 by 1012 cm-2 with a mobility of 10900 cm2/V.s. The structural properties of PHEMT structures are characterized by XRD measurements. Preliminary device results are also reported.

Paper Details

Date Published: 24 October 2000
PDF: 4 pages
Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); doi: 10.1117/12.405394
Show Author Affiliations
Hai Qun Zheng, Nanyang Technological Univ. (Singapore)
Kaladhar Radhakrishnan, Nanyang Technological Univ. (Singapore)
Soon Fatt Yoon, Nanyang Technological Univ. (Singapore)
Geok Ing Ng, Nanyang Technological Univ. (Singapore)

Published in SPIE Proceedings Vol. 4227:
Advanced Microelectronic Processing Techniques
H. Barry Harrison; Andrew Thye Shen Wee; Subhash Gupta, Editor(s)

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