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Proceedings Paper

Epitaxial CoSi2 on Si(100) by oxide-mediated epitaxy
Author(s): Mark William Kleinschmit; Mark Yeadon; J. Murray Gibson
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Paper Abstract

Oxide mediated epitaxy and related techniques have shown promise as candidates for the production of high quality epitaxial CoSi2 on Si(001). The mechanisms governing the success of these techniques are still not clear, however. We present microstructural observations of the formation of CoSi2 on both the clean and oxidized Si(001) surface. Our observations were made using a UHV transmission electron microscope with in-situ MBE capability.

Paper Details

Date Published: 24 October 2000
PDF: 5 pages
Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000);
Show Author Affiliations
Mark William Kleinschmit, Univ. of Illinois/Urbana-Champaign (United States)
Mark Yeadon, Institute of Materials Research and Engineering and National Univ. of Singapore (Singapore)
J. Murray Gibson, Argonne National Lab. (United States)


Published in SPIE Proceedings Vol. 4227:
Advanced Microelectronic Processing Techniques
H. Barry Harrison; Andrew Thye Shen Wee; Subhash Gupta, Editor(s)

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