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Proceedings Paper

Organolanthanide-based infrared-light-emitting devices
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Paper Abstract

We have demonstrated that it is possible to product organic light emitting diodes containing lanthanide ions which provide sharp electroluminescence emission at a range of wavelengths in the near infrared including 0.9 micrometers , 0.98 micrometers , 1.064 micrometers , 1.3 micrometers and 1.5 micrometers . For devices grown on ITO substrates we have demonstrated bright electroluminescence at drive voltages of approximately 12 V. We have shown that these diodes can be integrated onto silicon substrates and use the silicon as the anode of the device. For erbium based devices which emit at a wavelength of 1.5 micrometers we have demonstrated devices with room temperature internal efficiencies of approximately 0.01% at a drive voltage of 33 V.

Paper Details

Date Published: 26 October 2000
PDF: 8 pages
Proc. SPIE 4134, Photonics for Space Environments VII, (26 October 2000); doi: 10.1117/12.405361
Show Author Affiliations
William P. Gillin, Univ. of London (United Kingdom)
Richard J. Curry, Univ. of London (United Kingdom)

Published in SPIE Proceedings Vol. 4134:
Photonics for Space Environments VII
Edward W. Taylor, Editor(s)

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