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Proceedings Paper

High-aspect-ratio structure formation in x-ray lithography
Author(s): Vladimir A. Kudryashov; Sing Lee
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Paper Abstract

The relationship between the resist layer thickness, the masking layer thickness and x-rays wavelength was investigated to optimize submicron structures formation in 10 - 100 micrometer resist layers. It was shown that the optimal wavelength for 50 - 100 micrometer resist layer exposure is 0.4 nm. A specially designed medium-power soft x-ray tube with a water-cooled exchangeable anode was built for experiments in a high aspect ratio structures formation. Experimental investigations were carried out for 0.417 and 1.33 nm wavelength radiation. Test x-ray masks with 0.1 micrometer Si3N4 membrane and a gold absorption layer with 0.2 - 0.7 micrometer thickness were used for high aspect ratio structures formation in ERP-9 and UVIII resists with thickness from 2 to 10 micron. The 3 micrometer thick gold mesh with 15 micrometer pitch was used as a mask for structures formation in 100 micrometer thick SU8 resist layer with 0.417 nm x-rays.

Paper Details

Date Published: 20 October 2000
PDF: 9 pages
Proc. SPIE 4230, Micromachining and Microfabrication, (20 October 2000); doi: 10.1117/12.404896
Show Author Affiliations
Vladimir A. Kudryashov, Nanyang Technological Univ. and Institute of Microelectronics Technology (Singapore)
Sing Lee, Nanyang Technological Univ. (Singapore)

Published in SPIE Proceedings Vol. 4230:
Micromachining and Microfabrication
Kevin H. Chau; M. Parameswaran; Francis E.H. Tay, Editor(s)

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