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Proceedings Paper

Resistance degradation in early stage of electromigration of Al(Cu) metal lines
Author(s): Qiang Guo; Keng Foo Lo; Indrajit Manna; Xu Zeng; Bin Bin Jie
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Paper Abstract

Resistance degradation in the early stage of electro migration of Al(Cu) metal lines has been investigated by using high resolution resistance measurement. The resistance variation due to Cu diffusion along the line was separated form that due to the thermal stress in the electro migration test. It was found that Cu diffusion along the line strongly depends on the metal line structure. In a wide line with polycrystalline structure, the resistance drop due to Cu diffusion is linearly increased with the test time. However, as the linewidth is reduced and the line becomes bamboo structure, most of resistance drop is ascribed to the thermal stress and Cu diffusion along the line is almost negligible. This finding indicates that the role of Cu in the electro migration reliability strongly depends on the line structure, and previous theory on the role of Cu in improvement of electro migration reliability can not simply apply to the metal line with bamboo structure.

Paper Details

Date Published: 23 October 2000
PDF: 5 pages
Proc. SPIE 4229, Microelectronic Yield, Reliability, and Advanced Packaging, (23 October 2000); doi: 10.1117/12.404878
Show Author Affiliations
Qiang Guo, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Keng Foo Lo, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Indrajit Manna, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Xu Zeng, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Bin Bin Jie, Chartered Semiconductor Manufacturing, Ltd. (Singapore)

Published in SPIE Proceedings Vol. 4229:
Microelectronic Yield, Reliability, and Advanced Packaging
Cher Ming Tan; Yeng-Kaung Peng; Mali Mahalingam; Krishnamachar Prasad, Editor(s)

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