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Proceedings Paper

Low-voltage e-beam irradiation: a new tool for microlithography technology
Author(s): Vladimir A. Kudryashov
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Paper Abstract

The recent achievements in microfabrication technologies based on low- energy electron irradiation of resist are discussed. It has been shown that the lateral resolution of the low-voltage lithography technique is determined mostly by the electrons scattering in the resist, and is approximately equal to the beam penetration depth. Special technology of self-supporting structures formation in the upper resist layer based on low-energy e-beam exposure has been suggested as a way to reduce the radiation damage of the substrate material to zero. Such self-supporting structures could represent an easy production method for self-aligned nano-structures. Effective technologies of the photoresist structures profile control, and suppression of airborne contamination effects in positive CARs (based on the resist shower irradiation with low-energy electrons) are discussed. Submicron structure self-formation technique based on positive resist structures irradiation with low-voltage electrons is demonstrated.

Paper Details

Date Published: 20 October 2000
PDF: 10 pages
Proc. SPIE 4226, Microlithographic Techniques in Integrated Circuit Fabrication II, (20 October 2000); doi: 10.1117/12.404859
Show Author Affiliations
Vladimir A. Kudryashov, Institute of Microelectronics Technology (Russia) Nanyang Technological Univ. (Singapore)

Published in SPIE Proceedings Vol. 4226:
Microlithographic Techniques in Integrated Circuit Fabrication II
Chris A. Mack; XiaoCong Yuan, Editor(s)

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