Share Email Print
cover

Proceedings Paper

Liquid phase epitaxial growth and characterization of Nd:YAG/YAG structures for thin-film lasers
Author(s): Jerzy Sarnecki; Michal Malinowski; Jerzy Skwarcz; Ryszard Jablonski; Krystyna Mazur; Dariusz Litwin; Jerzy Sass
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Liquid phase epitaxy (LPE) is a suitable technique to produce diode laser-pumped solid state lasers with a planar waveguide structure. The thin films of Nd3+, Ga3+ and Lu3+ doped YAG have been grown form a supercooled molten garnet-flux high temperature solution on undoped YAG substrates by the standard LPE dipping technique. The emission spectra and fluorescence lifetimes have been measured for Nd:YAG layers with different concentration of Nd3+ ions. Additionally, the films were investigated versus concentration of neodymium, gallium and lutetium using ESR, x-ray diffraction and micro interferometric techniques. According to above measurements it can be concluded that the obtained epitaxial structures are of good quality.

Paper Details

Date Published: 4 October 2000
PDF: 6 pages
Proc. SPIE 4237, Laser Technology VI: Progress in Lasers, (4 October 2000); doi: 10.1117/12.402860
Show Author Affiliations
Jerzy Sarnecki, Institute of Electronic Materials Technology (Poland)
Michal Malinowski, Institute of Microelectronics and Optoelectronics (Poland)
Jerzy Skwarcz, Institute of Electronic Materials Technology (Poland)
Ryszard Jablonski, Institute of Electronic Materials Technology (Poland)
Krystyna Mazur, Institute of Electronic Materials Technology (Poland)
Dariusz Litwin, Institute of Applied Optics (Poland)
Jerzy Sass, Institute of Electronic Materials Technology (Poland)


Published in SPIE Proceedings Vol. 4237:
Laser Technology VI: Progress in Lasers
Wieslaw L. Wolinski; Zdzislaw Jankiewicz, Editor(s)

© SPIE. Terms of Use
Back to Top