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Proceedings Paper

Model of dislocations at the interface of bonded wafers
Author(s): Weihua Han; Jinzhong Yu; Liangchen Wang; Hongzhen Wei; Xiaofeng Zhang; Qiming Wang
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Paper Abstract

Wafer bonding is regardless of lattice mismatch in the integration of dissimilar semiconductor materials. This technology differs from the heteroepitaxy mainly in the mechanism of generating dislocations at the interface. A model of dislocations at the bonded interface is proposed in this paper. Edge-like dislocations, which most efficiently relax the strain, are predominant at the bonded interface. But the thermal stress associated with large thermal expansion misfit may drive dislocations away from the bonded interface upon cooling.

Paper Details

Date Published: 9 October 2000
PDF: 4 pages
Proc. SPIE 4225, Optical Interconnects for Telecommunication and Data Communications, (9 October 2000); doi: 10.1117/12.402686
Show Author Affiliations
Weihua Han, Institute of Semiconductors (China)
Jinzhong Yu, Institute of Semiconductors (China)
Liangchen Wang, Institute of Semiconductors (China)
Hongzhen Wei, Institute of Semiconductors (China)
Xiaofeng Zhang, Institute of Semiconductors (China)
Qiming Wang, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 4225:
Optical Interconnects for Telecommunication and Data Communications
Xiaomin Ren; Suning Tang, Editor(s)

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