Wavelength dependence and finite band width of reflectivity at the AR-coated facet have been taken into account to study the oscillation wavelength and threshold carrier density of one- fact antireflection semiconductor lasers. Analytic expressions for both the upper bound of the threshold carrier density and oscillation wavelength have been derived. Analysis shows the deviation between the wavelength of the AR-coated facet minimum reflectivity an that of the gain peak is a key parameter to reduce the Fabry-Perot oscillations.

Date Published: 3 October 2000
PDF: 5 pages
Proc. SPIE 4220, Advanced Photonic Sensors: Technology and Applications, (3 October 2000); doi: 10.1117/12.401722

Published in SPIE Proceedings Vol. 4220:
Advanced Photonic Sensors: Technology and Applications
Jinfa Tang; Chao-Nan Xu; Haizhang Li, Editor(s)