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Proceedings Paper

Development of a low-stress silicon-rich silicon nitride film for micromachined sensor applications
Author(s): Mark Williams; Jeff Smith; Judy Mark; George Matamis; Bishnu P. Gogoi
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Paper Abstract

Wet etch processes are important for the production of MEMS devices. Sacrificial oxides are often used to help define polysilicon structures, and these films are often etched using solutions containing hydrofluoric acid. One important consideration is the use of an etch stop which is resistant to HF. In this study, a silicon-rich silicon nitride film was developed for this purpose. Process parameters such as DCS:NH3 ratio, pressure and temperature have ben varied in order to create a film that has a low wet etch rate, good cross-wafer and cross-load uniformity, and low conductivity for good isolation resistance. The film is also designed to have a low tensile stress, which should minimize etch rate and also minimize wafer curvature, which is beneficial for subsequent photo steps. Finally, film characterization using the index of refraction as the primary process control is discussed.

Paper Details

Date Published: 25 August 2000
PDF: 7 pages
Proc. SPIE 4174, Micromachining and Microfabrication Process Technology VI, (25 August 2000); doi: 10.1117/12.396464
Show Author Affiliations
Mark Williams, Motorola (United States)
Jeff Smith, Motorola (United States)
Judy Mark, Motorola (United States)
George Matamis, Motorola (United States)
Bishnu P. Gogoi, Motorola (United States)

Published in SPIE Proceedings Vol. 4174:
Micromachining and Microfabrication Process Technology VI
Jean Michel Karam; John A. Yasaitis, Editor(s)

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