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Proceedings Paper

Overcritical damped laterally moving microstructures by ADRIE using SOI-substrates for automotive applications
Author(s): Oliver Krampitz; Michael Wycisk; Volker Biefeld; Josef Binder
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Paper Abstract

A fabrication process for laterally moving single crystal silicon microstructures on SOI substrates is presented. Due to an ADRIE process high aspect ratio structures are realized. The underlying silicon dioxide layer of the SOI substrate serves as sacrificial layer. A HF vapor etching system is used for the sacrificial layer etching to avoid sticking effects of the structures. For the fabrication of an acceleration threshold switch a metallized contact area is necessary. The switching contact is realized using a sidewall metalization of the laterally moving structures. The sensor structure is that of a spring mass system. To avoid uncontrollable switchings of the device, an overcritical damping of the sensor structure is needed. The high aspect ratio of the structures makes these high damping coefficients possible. The dynamic behavior of the device is achieved by squeeze-film damping of the high aspect ratio structures. Using optical measurement equipment for the device characterization, overcritical damping coefficients can be verified for the fabricated structures. The mechanical properties and the dynamic behavior of the structures are ideal for the construction of acceleration threshold switches for automotive applications.

Paper Details

Date Published: 25 August 2000
PDF: 10 pages
Proc. SPIE 4174, Micromachining and Microfabrication Process Technology VI, (25 August 2000); doi: 10.1117/12.396422
Show Author Affiliations
Oliver Krampitz, Univ. Bremen (Germany)
Michael Wycisk, Univ. Bremen (Germany)
Volker Biefeld, Univ. Bremen (Germany)
Josef Binder, Univ. Bremen (Germany)

Published in SPIE Proceedings Vol. 4174:
Micromachining and Microfabrication Process Technology VI
Jean Michel Karam; John A. Yasaitis, Editor(s)

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