Share Email Print

Proceedings Paper

Low-k etch/ash for copper dual damascene
Author(s): Tomoki Suemasa; Masaru Nishino; Kouichiro Inazawa; Vaidyanathan Balasubramanian; Eiichi Nishimura
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

We report the recent progress and issues related to low-k dielectric etch using TEL Unity II tools. Various low-films have been evaluated in terms of etch and post-etch ash. Inorganic and Organo-Silicate Glass films can be etched by modified oxide etch chemistry. In contrast, organic films are etched by non- fluorocarbon chemistry. Although etching the low-k film sis not so difficult, the concern in the damage caused by etch or ash. FTIR, XPS, Secondary Ion Mass Spectroscopy analysis and capacitance measurement suggest that little impact has been induced on the films during etch and properly controlled in-situ ash. Finally, we introduce the dual damascene scheme with spin-on bi-layer hardmask with SiLK.

Paper Details

Date Published: 18 August 2000
PDF: 6 pages
Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); doi: 10.1117/12.395739
Show Author Affiliations
Tomoki Suemasa, Tokyo Electron Yamanashi Ltd. (Japan)
Masaru Nishino, Tokyo Electron Yamanashi Ltd. (Japan)
Kouichiro Inazawa, Tokyo Electron Yamanashi Ltd. (Japan)
Vaidyanathan Balasubramanian, Tokyo Electron Massachusetts Inc. (United States)
Eiichi Nishimura, Tokyo Electron Massachusetts Inc. (Japan)

Published in SPIE Proceedings Vol. 4181:
Challenges in Process Integration and Device Technology
David Burnett; Shin'ichiro Kimura; Bhanwar Singh, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?