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Proceedings Paper

Prospective technology for system-on-a-chip: N2 implant followed by VHP O2 reoxidation
Author(s): Tien-Ying Luo; Husam N. Al-Shareef; George A. Brown; Victor H. C. Watt; Arun Karamcheti; Mike D. Jackson; Howard R. Huff; Bob Evans; Chongmok Lee; Hong-Fa Luan; Dim-Lee Kwong
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Paper Abstract

A novel technique - N2 ion implant followed by vertical high pressure O2 re-oxidation in a furnace, capable of growing oxides of multiple thickness is presented. It is observed that the oxidation rate can be well modulated by varying the N2 I/I dose, and VHP O2 re-oxidation provides enhanced oxide growth rate and controls the nitrogen profile in the film, as compared to RTO or furnace O2 re-oxidation. Therefore, more than 500 percent differential oxide growth rate can be realized by using N2 I/I and VHP O2 re-oxidation. In addition, post-implant RTA N2 anneal is found to improve the channel carrier and alter the flat-band and threshold voltages without increasing the oxide thickness.

Paper Details

Date Published: 18 August 2000
PDF: 10 pages
Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); doi: 10.1117/12.395738
Show Author Affiliations
Tien-Ying Luo, Univ. of Texas at Austin and International SEMATECH (United States)
Husam N. Al-Shareef, International SEMATECH (United States)
George A. Brown, International SEMATECH (United States)
Victor H. C. Watt, International SEMATECH (United States)
Arun Karamcheti, International SEMATECH (United States)
Mike D. Jackson, International SEMATECH (United States)
Howard R. Huff, International SEMATECH (United States)
Bob Evans, Gasonics International (United States)
Chongmok Lee, Univ. of Texas at Austin (United States)
Hong-Fa Luan, Univ. of Texas at Austin (United States)
Dim-Lee Kwong, Univ. of Texas at Austin (United States)

Published in SPIE Proceedings Vol. 4181:
Challenges in Process Integration and Device Technology
David Burnett; Shin'ichiro Kimura; Bhanwar Singh, Editor(s)

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