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Proceedings Paper

Process development of 50-A IMP Ti with <2% thickness uniformity for 300-mm iLB
Author(s): Xinyu Zhang; Ian Pancham; Anthony C.-T. Chan; Mani Subamani; John Forster; Jim von Gogh
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Paper Abstract

We have developed a 50 angstrom IMP Ti film for 300mm liner application. The process development was done on 300mm iLB Endura Platform, which combines the high bottom coverage and scalability of IMP Ti with the conformality of the CVD TXZ TiN process to address low contact resistance and good adhesion for W and Al application. The IMP technology has an advantage of significant improving the step coverage but has a limitation on obtaining a good film uniformity due to high pressure operation and coil sputtering non-uniformity. ICE technology was used to improve the coil sputtering non-uniformity and film uniformity was improved to approximately 4 percent. Further investigation revealed that the target to substrate spacing has a direct effect on film uniformity. It was found that there is optimum spacing for which great film uniformity can be achieved. The coil position between the target and substrate plays an important role as well. 1000 wafer marathon was performed and average 1.26 percent thickness uniformity was achieved. Thickness was 51 angstrom with 0.4 percent wafer to wafer repeatability.

Paper Details

Date Published: 18 August 2000
PDF: 5 pages
Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000);
Show Author Affiliations
Xinyu Zhang, Applied Materials, Inc. (United States)
Ian Pancham, Applied Materials, Inc. (United States)
Anthony C.-T. Chan, Applied Materials, Inc. (United States)
Mani Subamani, Applied Materials, Inc. (United States)
John Forster, Applied Materials, Inc. (United States)
Jim von Gogh, Applied Materials, Inc. (United States)

Published in SPIE Proceedings Vol. 4181:
Challenges in Process Integration and Device Technology
David Burnett; Shin'ichiro Kimura; Bhanwar Singh, Editor(s)

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