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Proceedings Paper

Deciphering and encoding product overlay: hidden errors
Author(s): Christopher J. Gould; William R. Roberts; Francis G. Goodwin
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Paper Abstract

In previous presentations we have described how conventional product registration does not account for Hidden Product Overlay Errors. The data presented showed that matched and controlled lithocells can still result in 20-30 nm residual overlay error. In the 0.170micrometers and smaller product design rules, there is no longer any tolerance for these errors. The residual overlay can be describe to be a product of lens distortion matching, optical and SEM measurement capability, selection of overlay mark location and pattern specific placement errors. In this paper we extend our initial findings to describe a procedure we have generalized to analyze the signatures of the systematic components of residual product overlay. The remaining systematic errors are deciphered and encoded into the standard run-to-run alignment offset feedback algorithms. The result is a significant reduction in product misalignment. The ramification is the realization of overlay control suitable for sub 0.150 micrometers DRAM volume.

Paper Details

Date Published: 18 August 2000
PDF: 12 pages
Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); doi: 10.1117/12.395713
Show Author Affiliations
Christopher J. Gould, White Oak Semiconductor/Infineon Technologies AG (United States)
William R. Roberts, White Oak Semiconductor/Infineon Technologies AG (United States)
Francis G. Goodwin, White Oak Semiconductor/Infineon Technologies AG (United States)

Published in SPIE Proceedings Vol. 4181:
Challenges in Process Integration and Device Technology
David Burnett; Shin'ichiro Kimura; Bhanwar Singh, Editor(s)

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