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Proceedings Paper

II-VI light emitting diode with low operation voltage
Author(s): Wen-Hou Lan; Y. T. Cheng; Alpha C.H. Lin; Horng Chang; Wen Ray Chen; Yan-Kuin Su; Shoou-Jinn Chang; W. C. Chou; Chu-Shou Yang
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Paper Abstract

In our previous work, we first propose the Au/AuBe is a good ohmic contact material to p-type ZnTe. After apply the material to II-VI light emitting diode, the operation voltage as low as 2.4V can be observed. The II-VI blue light emitting diode (LED) were grown in a RIBER 32P system with Zn(6N), Se(6N), Te(6N), Cd(6N) on (001) GaAs+ substrate. The structure consisted of a GaAs:Si(n+) buffer layer, ZnSe:C1 (0.5um), ZnSe(200A)/ZnCdSe (100A) multiple quantum well, ZnSe(200A), ZnSe:N(0.3um), ZnSe:N/ZnTe:N multilayer and ZnTe:N (300A). Standard photolithography technology was doen to fabricate the diode. The mesa etch was done by (formula available in paper) etching solution. The p-type ohmic was done by AuBe/Au metal. The emission wavelength was 530nm (room temperature) and 495 (30K) with 2.4V under CW operation. Since low operation voltage introduced less heat in the device, better thermal behavior can be expected with this low operation voltage.

Paper Details

Date Published: 11 July 2000
PDF: 9 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392190
Show Author Affiliations
Wen-Hou Lan, Chung Shan Institute of Science and Technology (Taiwan)
Y. T. Cheng, Chung Shan Institute of Science and Technology (Taiwan)
Alpha C.H. Lin, Chung Shan Institute of Science and Technology (Taiwan)
Horng Chang, Chung Shan Institute of Science and Technology (Taiwan)
Wen Ray Chen, National Cheng Kung Univ. (Taiwan)
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)
Shoou-Jinn Chang, National Cheng Kung Univ. (Taiwan)
W. C. Chou, Chung Yuan Christian Univ. (Taiwan)
Chu-Shou Yang, Chung Yuan Christian Univ. (Taiwan)

Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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