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Proceedings Paper

ZnSe/Si growth by liquid phase deposition
Author(s): Min Yen Yeh; Hung Ming Yen
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Paper Abstract

ZnSe is an important semiconductor material with a large bandgap (2.68 eV), which has the potential to be used for photoluminescent and eletroluminescent devices and for window layer of solar cells. In this work, a low-cost and large-area growth method for ZnSe layer on Si substrate was studied by liquid phase deposition (LPD). The micrograph of the surface shows specula but a roughness surface texture is obtained. The island texture could be improved by raising growth temperatures. The crystallinity could be improved by the growth temperature considerations. High resistivity and specular layers were obtained as grown at room temperature. The abrupt interface resulted from less interdiffusion between ZnSe layers and substrates was reasonable under the growth condition at room temperatures.

Paper Details

Date Published: 11 July 2000
PDF: 8 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392183
Show Author Affiliations
Min Yen Yeh, Yung-Ta Institute of Technology and Commerce (Taiwan)
Hung Ming Yen, Yung-Ta Institute of Technology and Commerce (Taiwan)

Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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