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Proceedings Paper

Built-in electric field investigation on InAs and InGaAs nanostructures by photoreflectance
Author(s): ChihMing Lai; JungHao Huang; Gwo-Jen Jan
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Paper Abstract

The photoreflectance has been measured on InGaAs/GaAs multiple strained quantum wells structures at room temperature. The Franz-Keldysh Oscillation (FKOs) features are clearly observed on photoreflectance spectra. Based on FKOs features above the energy band gap, the built-in electric field was studied by conventional FKOs calculation and the Fast Fourier Transform, and Airy function fit techniques. The built-in electric fields were evaluated and discussed. The results show that Fast Fourier Transform could provide an accurate and fast method to calculate the built-in electric field.

Paper Details

Date Published: 11 July 2000
PDF: 7 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392181
Show Author Affiliations
ChihMing Lai, National Taiwan Univ. (Taiwan)
JungHao Huang, National Taiwan Univ. (Taiwan)
Gwo-Jen Jan, National Taiwan Univ. (Taiwan)

Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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