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Proceedings Paper

Dielectric function of GaN: model calculations
Author(s): Aleksandra B. Djurisic; E. Herbert Li
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Paper Abstract

In this work we have modeled the optical functions of hexagonal GaN (corresponding to E(perpendicular)c) in the range from 1 eV to 10 eV using a modified critical points model. The difference between the model employed and the standard critical points model is that the exponent m is an adjustable parameter, and does not have fixed value depending on the type of critical point. Excellent agreement with the experimental data has been achieved over the entire investigated spectral range. Obtained relative rms errors equal 0.6% for the real part, and 2.0% for the imaginary part of the index refraction.

Paper Details

Date Published: 11 July 2000
PDF: 8 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392178
Show Author Affiliations
Aleksandra B. Djurisic, Technische Univ. Dresden (Hong Kong)
E. Herbert Li, Univ. of Hong Kong (United States)

Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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