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Proceedings Paper

Infrared reflectance study of chemical-vapor-deposition-grown 3C-silicon carbide on silicon substrate
Author(s): W. F. Chan; Zhe Chuan Feng; Soo-Jin Chua; Jianyi Lin
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Paper Abstract

Room Temperature (RT) Infrared (IR) Reflectance spectra are studied both theoretically and experimentally on 3C-SiC films grown on silicon (100) substrate by low pressure chemical vapor deposition (LPCVD). By the use of transfer matrix method, the spectral features influenced by film thickness, phonon-damping constant and free carrier concentration are systematically studied. Comparisons of reflectance spectra are made between experimental spectra and those of ideal samples. A modified effective medium model with consideration of the presence of interfacial layer is introduced to interpret some unusual features. Although some of our results are qualitative, careful analysis of reflectance spectra does provide valuable information about film quality.

Paper Details

Date Published: 11 July 2000
PDF: 8 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392142
Show Author Affiliations
W. F. Chan, National Univ. of Singapore (Singapore)
Zhe Chuan Feng, Institute of Materials Research and Engineering (Singapore)
Soo-Jin Chua, Institute of Materials Research and Engineering and National Univ. of Singapore (Singapore)
Jianyi Lin, National Univ. of Singapore (Singapore)

Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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