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Proceedings Paper

Etch of gallium nitride and other III-IV materials using a novel high-density plasma configuration
Author(s): TsungNane Kuo; JuiHung Yeh; Hong-Ji Lee; ChingAn Chen; GuangKai Jeng; ChingPiao Lin
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Paper Abstract

Implementation of a novel high-density plasma configuration has led to high etch rates of various opto-electronic device structures. The etch rate for multiple quantum well GaN/GaInN structures exceeds 7500A/min, and that for AlGaInP/GaInP structure is over 4.5 micron/min with near-vertical profile. Discussion will cover the analysis of the etch-rate, micro- morphology, etch-profile and selectivity with respect to the influence by various process parameters. Deep-etch for over 20 microns with photoresist as the protection layer has been achieved, which resulted in nearly 90-degree profile.

Paper Details

Date Published: 11 July 2000
PDF: 8 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392123
Show Author Affiliations
TsungNane Kuo, Nano-Architect Research Corp. (Taiwan)
JuiHung Yeh, Nano-Architect Research Corp. (Taiwan)
Hong-Ji Lee, Nano-Architect Research Corp. (Taiwan)
ChingAn Chen, Nano-Architect Research Corp. (Taiwan)
GuangKai Jeng, Nano-Architect Research Corp. (Taiwan)
ChingPiao Lin, Nano-Architect Research Corp. (Taiwan)

Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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