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Proceedings Paper

Exchange interaction of 3D transition metal impurity with band electrons in diluted magnetic semiconductors
Author(s): Tzuen Rong Yang; MiRa Kim
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Paper Abstract

The effects of the exchange interaction between the localized d electrons of manganese ion and the delocalized host band electrons in II1-xMnxVI semiconductors are discussed based on the perturbation scheme and the k p theory as a function of the manganese composition. We observe that the exchange interaction lead to the red shift of the energy gap and it is shown that the many-body interaction due to exchange play an important role in accurate depiction of the energy gap with variation of the manganese amounts in diluted magnetic semiconductors. In addition, we have compared the results with experimental data of IR spectroscopy.

Paper Details

Date Published: 11 July 2000
PDF: 8 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000);
Show Author Affiliations
Tzuen Rong Yang, National Taiwan Normal Univ. (Taiwan)
MiRa Kim, National Taiwan Normal Univ. (Taiwan)

Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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