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Proceedings Paper

Impact of pattern proximity correction on die-to-database mask inspection
Author(s): Anja Rosenbusch; Vicky Bailey; Yair Eran; Reuven Falah; Shirley Hamar; Neil J. Holmes; Andrew C. Hourd; Hartmut Kirsch; Andrew McArthur
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Paper Abstract

While the semiconductor industry is following a very aggressive roadmap without a corresponding reduction in exposure wavelength, the role of resolution enhancement techniques like PSM and OPC is becoming more and more important. Mask making for these advanced techniques is one of the most crucial parts in making these techniques work. Mask inspection is one of the major challenges in the mask making process, as it is one of the most performance critical steps in the entire mask making process. Especially contact or OPC patterns show difficulties in die-to-database inspection as the CAD data asks for square corners. LPC is a mask enhancement technique improving image quality and CD linearity for laser pattern generators. The paper present the impact of Laser Proximity Correction on contact and line patterns of 0.18 micrometers generation. The LBM is used to characterize Cd uniformity improvement of the entire plate.

Paper Details

Date Published: 19 July 2000
PDF: 8 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392071
Show Author Affiliations
Anja Rosenbusch, Sigma-C, Inc. (United States)
Vicky Bailey, Compugraphics International Ltd. (United Kingdom)
Yair Eran, Applied Materials (Israel)
Reuven Falah, Applied Materials (Israel)
Shirley Hamar, Applied Materials (United States)
Neil J. Holmes, Compugraphics International Ltd. (United Kingdom)
Andrew C. Hourd, Compugraphics International Ltd. (United Kingdom)
Hartmut Kirsch, SIGMA-C, Inc. (United States)
Andrew McArthur, Applied Materials (United States)

Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

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