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Proceedings Paper

Halftone PSM inspection sensitivity of OPC line/space pattern for 150-nm generation
Author(s): Chun-Hung Wu; Jackie Cheng; David Wang; Clare Wu; Yair Eran; Reuven Falah; Wolfgang Staud
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Paper Abstract

The process of manufacturing and inspecting 150nm generation reticles, incorporating RETs - Resolution Enhancement Technologies - is discussed. Some of the RETs applied at the lithography stage while exposing the wafer, such as OAI - Off Axis Illumination, others RET are being incorporated into the reticle, such as OPC - Optical Proximity Correction - and PSM - Phase Shift is discussed. Many relevant aspects are discussed in this paper such as the ability to produce those critical layers while keeping good CD linearity, and the ability to detect OPC related defects with current reticle inspection technology.

Paper Details

Date Published: 19 July 2000
PDF: 7 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392070
Show Author Affiliations
Chun-Hung Wu, Precision Semiconductor Mask Corp. (Taiwan)
Jackie Cheng, Precision Semiconductor Mask Corp. (Taiwan)
David Wang, Precision Semiconductor Mask Corp. (Singapore)
Clare Wu, Applied Materials (Taiwan)
Yair Eran, Applied Materials (Israel)
Reuven Falah, Applied Materials (Israel)
Wolfgang Staud, Applied Materials (United States)

Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

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