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Proceedings Paper

Analysis of reticle deformation, reduction ratio, and MEEF of future optical lithography
Author(s): Kenichi Kotoku; Koichi Mikami; Ryuichi Ebinuma; Yuichi Yamada; Yuan Zhang
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Paper Abstract

As a result of aggressive line width shrinking of semiconductor devices in the recent years, the requirements for advanced reticles are getting more and more stringent. Therefore, it is beneficial to consider increasing the reduction ratio of projection optics in order to relax the reticle tolerances. This paper discusses quantitatively the reticle, CD, DOF and overlay accuracy requirement listed in the 1999 International Technology Roadmap for Semiconductor (ITRS) roadmap. Our simulation suggests mask drawing accuracy needs to be further improved for better CD control accuracy. Increasing reduction ratio to 6x is also another way to meet the line width requirement. Productively enhancement with 6x reduction in comparison to 4x reduction ratio is also shown.

Paper Details

Date Published: 19 July 2000
PDF: 10 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392069
Show Author Affiliations
Kenichi Kotoku, Canon Inc. (Japan)
Koichi Mikami, Canon Inc. (Japan)
Ryuichi Ebinuma, Canon Inc. (Japan)
Yuichi Yamada, Canon Inc. (Japan)
Yuan Zhang, Canon USA Inc. (United States)

Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

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