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Proceedings Paper

Comparative study on MEEF and dose latitude between attenuated PSM and Cr binary masks
Author(s): Hyun Joon Cho; Yong-Hoon Kim; Seong-Woon Choi; Woo-Sung Han; Jung-Min Sohn
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Paper Abstract

As the feature size shrinks dramatically, it is essential to use low-kl factor for minimum resolution under present optical technology. However, low kl causes the increase of the mask error enhancement factor (MEEF), which means that the wafer CD error transferred form mask CD error will be amplified non-linearity. This MEEF becomes one of the most critical issues in depth of focus (DOF) and an exposure latitude. This paper confirms that a small MEEF and better dose latitude is achievable if an attenuated phase shift mask is combined with a n optimal off axis illumination condition because the image contrast on wafer can be improved by reducing the magnitude difference between the zeroth order and the first order. This improvement is more noticeable especially in contact hole patterns. And it is confined that the choice of optimal intensity threshold is critical to MEEF, according to the dose error enhancement factor results for various resist thresholds. In conclusion, a smaller MEEF is obtained by combination of OAI and att. PSM and by choosing optimal intensity threshold on this low K1 lithography regime.

Paper Details

Date Published: 19 July 2000
PDF: 7 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392034
Show Author Affiliations
Hyun Joon Cho, Samsung Electronics Co., Ltd. (South Korea)
Yong-Hoon Kim, Samsung Electronics Co., Ltd. (South Korea)
Seong-Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)
Jung-Min Sohn, Samsung Electronics Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

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