Staring InSb FPAs grown by MBE have been demonstrated. Low growth temperatures have been employed to provide p⁺-n- n⁺ photodiodes with a dark, 80 K R_OA equals 9 X 10⁵(Omega) cm². A degenerately doped substrate has been used to provide transparency in the 3.5 micrometer - 5.5 micrometer spectral region. Free carrier absorption necessitates some thinning of the substrate and an anti- reflection coated external quantum efficiency of 62% has been achieved with a final thickness of approximately equals 40 micrometer. 320 X 256 FPA's operating at 90 K and looking at a 295 K scene in f/2 have a noise equivalent temperature (NE(Delta) T) at half well of 10.4 mK. FPA operability exceeds 99.7%.

Date Published: 17 July 2000
PDF: 6 pages
Proc. SPIE 4028, Infrared Detectors and Focal Plane Arrays VI, (17 July 2000); doi: 10.1117/12.391753

Published in SPIE Proceedings Vol. 4028:
Infrared Detectors and Focal Plane Arrays VI
Eustace L. Dereniak; Robert E. Sampson, Editor(s)