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Proceedings Paper

Computation for crosstalk effects in p-on-n Hg1-xCdxTe heterojunction IRFPA radiated by using uniformly parallel light
Author(s): Hang-Ming Dai; Thomas J. Sanders
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Paper Abstract

In our work, a three-dimensional IRFPA model has been constructed to conduct device simulations for drift-diffusion based Hg1-xCdxTe devices. The model uses the finite element method and numerical errors are automatically eliminated during computation. Computational results can thus easily achieve accuracy. The computer model was constructed by using C++ language. We have successfully represented simulation results in three-dimensional graphics. In this paper, a model for analyzing infrared-illuminated p-on-n photodiodes is presented. The computational results were verified analytically and experimentally. Furthermore, an IRFPA device model was built for calculating crosstalk by using uniformly collimated infrared radiation. Devices used for the model were linear FPAs. Ohmic contacts with zero bias were applied on electrodes. Other physics phenomena such as recombinations were also considered in the analyses. This model and simulation approach can provide an efficient way to reduce crosstalk in designing advanced MCT IRFPA devices.

Paper Details

Date Published: 17 July 2000
PDF: 8 pages
Proc. SPIE 4028, Infrared Detectors and Focal Plane Arrays VI, (17 July 2000); doi: 10.1117/12.391749
Show Author Affiliations
Hang-Ming Dai, Florida Institute of Technology (United States)
Thomas J. Sanders, Florida Institute of Technology (United States)

Published in SPIE Proceedings Vol. 4028:
Infrared Detectors and Focal Plane Arrays VI
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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