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Proceedings Paper

Ultralow-threshold-current-density quantum dot lasers using the dots-in-a-well (DWELL) structure
Author(s): Guangtian T. Liu; Andreas Stintz; Hua Li; Luke F. Lester; Kevin J. Malloy
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Paper Abstract

Quantum dots laser diodes using the dots-in-a-well (DWELL) structure (InAs dots in an InGaAs quantum wells) have exhibited significant recent progress. With a single InAs dot layer in In0.15Ga0.85As quantum well, threshold current densities are as low as 26 A cm-2 at 1.25 micrometer. Quantum dot laser threshold current densities are now lower than any other reported semiconductor laser. In this work, the threshold current density is reduced to 16 A cm-2 by HR coatings on the same device. Further investigation of performance reveals that use of multiple DWELL stacks improves the modal gain and internal quantum efficiency. It is suggested that carrier heating out of the quantum dots limits the TO value of these DWELL lasers.

Paper Details

Date Published: 14 July 2000
PDF: 9 pages
Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391490
Show Author Affiliations
Guangtian T. Liu, Univ. of New Mexico (United States)
Andreas Stintz, Univ. of New Mexico (United States)
Hua Li, Univ. of New Mexico (United States)
Luke F. Lester, Univ. of New Mexico (United States)
Kevin J. Malloy, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

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