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Proceedings Paper

Infrared photodetectors based on Sb materials
Author(s): Alex Siew-Wan Lee; E. Herbert Li
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Paper Abstract

Strained layer superlattices based on Sb semiconductor material are proposed for long wavelength photodetector applications. Theoretical studies on the band structure of AlGaSb/GaSb, AlInSb/InSb, and GaInSb/InAs superlattices show that the wavelength coverage can be extended from 0.5 to 30 micrometer. Optical absorptions of the superlattices are calculated taking into account the intermixing effect at different diffusion lengths. Responsivity and detectivity of the GaInSb/InAs superlattice detector are also analyzed. Blue shift of responsivity is observed for increased intermixing and the detectivity D* at 77 K is increased by more than one fold in magnitude as R0A increases linearly with intermixing.

Paper Details

Date Published: 14 July 2000
PDF: 7 pages
Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391483
Show Author Affiliations
Alex Siew-Wan Lee, McMaster Univ. (Canada)
E. Herbert Li, Univ. of Hong Kong (United States)

Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

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