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Proceedings Paper

Modeling semiconductor lasers: simulation of devices based on microscopic physics
Author(s): Jerome V. Moloney; Miroslav Kolesik; Marcelo Matus; Keith J. Kasunic
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Paper Abstract

We are currently developing 2 semiconductor laser simulators built on a first-principles microscopic physics basis. The first is a PC-based, plane-wave simulator for both component and system-level design of low-power optoelectronic devices. The second is a supercomputer-based simulator that models the fully time-dependent and spatially-resolved optical, carrier, and temperature fields for arbitrary geometry, high-power semiconductor lasers. Both simulators are based on a comprehensive gain model that includes the relevant bandstructure of the quantum wells and confining barrier regions together with a fully quantum mechanical many-body calculation that takes all occupied bands into account.

Paper Details

Date Published: 14 July 2000
PDF: 7 pages
Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391432
Show Author Affiliations
Jerome V. Moloney, Univ. of Arizona (United States)
Miroslav Kolesik, Univ. of Arizona (United States)
Marcelo Matus, Univ. of Arizona (United States)
Keith J. Kasunic, Univ. of Arizona (Canada)

Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

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